Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group
dc.contributor	Universitat Politècnica de Catalunya. SEPIC - Sistemes Electrònics de Potència i de Control
dc.contributor.author	Berbel Artal, Néstor
dc.contributor.author	Fernández García, Raúl
dc.contributor.author	Gil Galí, Ignacio
dc.date	2009-10
dc.identifier.citation	Berbel, N.; Fernandez, R.; Gil, I. Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter. A: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. "20th European Symposium on Reliability of Electron Devices, Failure physics and analysis". Arcachon: 2009, p. 1048-1051.
dc.identifier.uri	http://hdl.handle.net/2117/6826
dc.language.iso	eng
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject	Microelectronics
dc.subject	Microelectrònica
dc.title	Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter
dc.type	info:eu-repo/semantics/submittedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	Published in Microelectronics Reliability, Volume 49, Issues 9-11, September-November 2009, Pages 1048-1051
dc.description.abstract	The effects of negative bias temperature instability (NBTI) on the performance of a CMOS inverter have been investigated by means of both simulation and experimental methods. The simulation of NBTI effects on CMOS inverter has been done by shifting the pFET Vtho BSIM parameter. The results show that NBTI shifts the inverter transfer curve, reduces the low noise margin and current consumption but increases the high noise margin. A good agreement between simulation and experimental results has been obtained. Therefore, it can be assumed that the effect of NBTI on CMOS circuits can be mainly predicted by shifting the Vtho pFET parameter.
dc.description.abstract	Peer Reviewed

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