Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR

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dc.contributor	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.contributor	Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.contributor.author	Maya Sánchez, Mª del Carmen
dc.contributor.author	Lázaro Guillén, Antoni
dc.contributor.author	Pradell i Cara, Lluís
dc.date	2003
dc.identifier.citation	Maya, M. C.; Lázaro, A.; Pradell, L. Noise model of a reverse-biased cold-FET applied to the characterization of its ENR. Microwave and optical technology letters, 2004, vol. 40, núm. 4, p. 326-330.
dc.identifier.citation	0895-2477
dc.identifier.uri	http://hdl.handle.net/2117/1105
dc.language.iso	eng
dc.publisher	JOHN WILEY & SONS INC
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject	Noise Measurement
dc.subject	Microwaves
dc.subject	on-wafer noise source
dc.subject	excess noise ratio
dc.subject	small signal equivalent circuit model
dc.subject	noise model
dc.subject	calibration
dc.subject	electric noise measurement
dc.subject	equivalent circuits
dc.subject	microwave field effect transistors
dc.subject	S-parameters
dc.subject	broadband-noise circuit model
dc.subject	reverse-biased cold-FET
dc.subject	noise-current sources
dc.subject	excess noise ratio
dc.subject	full receiver-noise calibration
dc.subject	noise powers
dc.subject	40 GHz
dc.subject	Soroll -- Mesurament
dc.subject	Microones
dc.title	Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR
dc.type	info:eu-repo/semantics/article
dc.description.abstract	This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given.
dc.description.abstract	Peer Reviewed

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