Title:
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Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR
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Author:
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Maya Sánchez, Mª del Carmen; Lázaro Guillén, Antoni; Pradell i Cara, Lluís
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Other authors:
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Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
Abstract:
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This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques -Noise Measurement -Microwaves -on-wafer noise source -excess noise ratio -small signal equivalent circuit model -noise model -calibration -electric noise measurement -equivalent circuits -microwave field effect transistors -S-parameters -broadband-noise circuit model -reverse-biased cold-FET -noise-current sources -excess noise ratio -full receiver-noise calibration -noise powers -40 GHz -Soroll -- Mesurament -Microones |
Rights:
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Document type:
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Article |
Published by:
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JOHN WILEY & SONS INC
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