A comparative variability analysis for CMOS and CNFET 6T SRAM cells

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.author	García Almudéver, Carmen
dc.contributor.author	Rubio Sola, Jose Antonio
dc.date	2011
dc.identifier.citation	García, C.; Rubio, J. A comparative variability analysis for CMOS and CNFET 6T SRAM cells. A: IEEE International Midwest Symposium on Circuits and Systems. "International Midwest Symposium on Circuits and Systems (MWSCAS)". 2011, p. 1-4.
dc.identifier.citation	978-1-61284-856-3
dc.identifier.citation	10.1109/MWSCAS.2011.6026572
dc.identifier.uri	http://hdl.handle.net/2117/14292
dc.language.iso	eng
dc.relation	http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6026572&tag=1
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject	CMOS
dc.subject	MOSFET
dc.subject	CNFET
dc.subject	SRAM chips
dc.subject	Carbon nanotubes
dc.subject	Nanotubs de carboni
dc.title	A comparative variability analysis for CMOS and CNFET 6T SRAM cells
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.
dc.description.abstract	Peer Reviewed

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