Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy

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dc.contributor	Universitat de Barcelona
dc.contributor.author	Pérez Murano, Francesc
dc.contributor.author	Abadal, G.
dc.contributor.author	Barniol i Beumala, Núria
dc.contributor.author	Aymerich Humet, Xavier
dc.contributor.author	Servat, J.
dc.contributor.author	Gorostiza Langa, Pablo Ignacio
dc.contributor.author	Sanz Carrasco, Fausto
dc.date	2012-05-02T11:05:11Z
dc.date	2012-05-02T11:05:11Z
dc.date	1995-12-01
dc.date	2012-04-25T10:54:02Z
dc.identifier.citation	0021-8979
dc.identifier.citation	105869
dc.identifier.uri	http://hdl.handle.net/2445/24743
dc.format	5 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360505
dc.relation	Journal of Applied Physics, 1995, vol. 78, núm. 11, p. 6797-6802
dc.relation	http://dx.doi.org/10.1063/1.360505
dc.rights	(c) American Institute of Physics, 1995
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Microscòpia de força atòmica
dc.subject	Silici
dc.subject	Nanoelectrònica
dc.subject	Detectors
dc.subject	Camps elèctrics
dc.subject	Atomic force microscopy
dc.subject	Silicon
dc.subject	Nanoelectronics
dc.subject	Detectors
dc.subject	Electric fields
dc.title	Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance.

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