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dc.contributor | Universitat de Barcelona |
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dc.contributor.author | Zhang, Zongzhi |
dc.contributor.author | Cardoso, Susana |
dc.contributor.author | Freitas, P. P. |
dc.contributor.author | Batlle Gelabert, Xavier |
dc.contributor.author | Wei, Peng |
dc.contributor.author | Barradas, N. |
dc.contributor.author | Soares, J. C. |
dc.date | 2012-02-16T08:49:35Z |
dc.date | 2012-02-16T08:49:35Z |
dc.date | 2001 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 174199 |
dc.identifier.uri | http://hdl.handle.net/2445/22086 |
dc.format | 3 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicada a: http://dx.doi.org/10.1063/1.1356712 |
dc.relation | Journal of Applied Physics, 2001, vol. 89, núm. 11, p. 6665-6667 |
dc.relation | http://dx.doi.org/10.1063/1.1356712 |
dc.rights | Magnetic properties |
dc.rights | (c) American Institute of Physics, 2001 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Propietats magnètiques |
dc.subject | Circuits de transistors |
dc.subject | Electrònica de l'estat sòlid |
dc.subject | Transistor circuits |
dc.subject | Solid state electronics |
dc.title | 40% tunneling magnetoresistance after anneal at 380°C for tunnel junctions with iron¿oxide interface layers |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |