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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Gomila Lluch, Gabriel |
dc.contributor.author | Rubí Capaceti, José Miguel |
dc.date | 2012-02-16T08:49:32Z |
dc.date | 2012-02-16T08:49:32Z |
dc.date | 1997 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 145957 |
dc.identifier.uri | http://hdl.handle.net/2445/22080 |
dc.format | 8 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.364305 |
dc.relation | Journal of Applied Physics, 1997, vol. 81, núm. 6, p. 2674 |
dc.relation | http://dx.doi.org/10.1063/1.364305 |
dc.rights | Semiconductors |
dc.rights | (c) American Institute of Physics, 1997 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Semiconductors |
dc.subject | Díodes |
dc.subject | Electònica de l'estat sòlid |
dc.subject | Contactes elèctrics |
dc.subject | Diodes |
dc.subject | Solid state electronics |
dc.subject | Electric contacts |
dc.title | Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |