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dc.contributor.author | Roura Grabulosa, Pere |
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dc.contributor.author | Farjas Silva, Jordi |
dc.contributor.author | Roca i Cabarrocas, Pere |
dc.date | 2008 |
dc.identifier.citation | Roura, P., Farjas, J., i Roca i Cabarrocas, P. (2008). Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon. Journal of Applied Physics, 104 (7), 73521. Recuperat 7 febrer 2011 0, a http://link.aip.org/link/doi/10.1063/1.2990767 |
dc.identifier.citation | 0021-8979 (versió paper) |
dc.identifier.citation | 1089-7550 (versió electrònica) |
dc.identifier.citation | http://dx.doi.org/10.1063/1.2990767 |
dc.identifier.uri | http://hdl.handle.net/10256/3222 |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2990767 |
dc.relation | © Journal of Applied Physics, 2008, vol. 104, núm. 7 |
dc.relation | Articles publicats (D-F) |
dc.rights | Tots els drets reservats |
dc.subject | Cristal·lització |
dc.subject | Espectroscòpia Raman |
dc.subject | Moviment ondulatori, Teoria del |
dc.subject | Reaccions d'anihilació |
dc.subject | Semiconductors amorfs |
dc.subject | Silici |
dc.subject | Amorphous semiconductors |
dc.subject | Annihilation reactions |
dc.subject | Crystallization |
dc.subject | Raman spectroscopy |
dc.subject | Silicon |
dc.title | Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract |