2026-04-17T02:55:36Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/993622025-12-05T14:47:09Zcom_2072_1057col_2072_478821col_2072_478917

Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition Polo Trasancos, Ma. del Carmen Peiró Martínez, Francisca Cifre, J. Bertomeu i Balagueró, Joan Puigdollers i González, Joaquim Andreu i Batallé, Jordi Silici Deposició química en fase vapor Pel·lícules fines Creixement cristal·lí Silicon Chemical vapor deposition Thin films Crystal growth Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. 2016-06-08T13:59:59Z 2016-06-08T13:59:59Z 1995 2016-06-08T14:00:04Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion 0951-3248 https://hdl.handle.net/2445/99362 119500 eng Reproducció del document publicat a: http://iopscience.iop.org/journal/1742-6596 Institute of Physics Conference Series, 1995, vol. 146, p. 503-506 cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995 http://creativecommons.org/licenses/by/3.0/es info:eu-repo/semantics/openAccess 4 p. application/pdf Institute of Physics (IOP) Articles publicats en revistes (Física Aplicada)