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oai:recercat.cat:2445/987542025-12-05T14:48:22Zcom_2072_1057col_2072_478821col_2072_478917

urn:hdl:2445/98754 The role of hydrogen in the formation of microcrystalline silicon Fontcuberta i Morral, A. Bertomeu i Balagueró, Joan Roca i Cabarrocas, P. (Pere) Silici Hidrogen Temperatures baixes Pel·lícules fines Silicon Hydrogen Low temperatures Thin films The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation. 2016-05-23T13:50:00Z 2016-05-23T13:50:00Z 2000 2016-05-11T16:58:30Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00324-4 Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 559-563 http://dx.doi.org/10.1016/S0921-5107(99)00324-4 (c) Elsevier B.V., 2000 info:eu-repo/semantics/openAccess Elsevier B.V. Articles publicats en revistes (Física Aplicada)