2026-04-17T03:02:13Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/476062025-11-19T11:00:04Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Voz Sánchez, Cristóbal author Soler Vilamitjana, David author Fonrodona Turon, Marta author Bertomeu i Balagueró, Joan author Asensi López, José Miguel author Andreu i Batallé, Jordi author 2013-11-08T08:43:51Z 2013-11-08T08:43:51Z 2001 2013-11-08T08:43:51Z The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts. Optoelectrònica Silici Nanocristalls Deposició química en fase vapor Cèl·lules solars Optoelectronics Silicon Nanocrystals Chemical vapor deposition Solar cells Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition