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oai:recercat.cat:2445/475042025-12-05T14:48:22Zcom_2072_1057col_2072_478821col_2072_478917

On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers Bertomeu i Balagueró, Joan Puigdollers i González, Joaquim Asensi López, José Miguel Andreu i Batallé, Jordi Semiconductors amorfs Optoelectrònica Espectroscòpia Silici Semimetalls Amorphous semiconductors Optoelectronics Spectrum analysis Silicon Semimetals This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states. 2013-11-05T12:53:27Z 2013-11-05T12:53:27Z 1993 2013-11-05T12:53:27Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion 0022-3093 https://hdl.handle.net/2445/47504 088431 eng Versió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N Journal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864 http://dx.doi.org/10.1016/0022-3093(93)91133-N (c) Elsevier B.V., 1993 info:eu-repo/semantics/openAccess 6 p. application/pdf Elsevier B.V. Articles publicats en revistes (Física Aplicada)