2026-04-13T01:49:31Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/473802025-11-19T10:59:50Zcom_2072_1057col_2072_478821col_2072_478917

Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD Soler Vilamitjana, David Fonrodona Turon, Marta Voz Sánchez, Cristóbal Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Silici Pel·lícules fines Nanocristalls Deposició en fase de vapor Cèl·lules solars Silicon Thin films Nanocrystals Vapor-plating Solar cells In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%). 2013-10-29T15:26:05Z 2013-10-29T15:26:05Z 2001 2013-10-29T15:26:05Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(00)01615-1 Thin Solid Films, 2001, vol. 383, num. 1-2, p. 189-191 http://dx.doi.org/10.1016/S0040-6090(00)01615-1 (c) Elsevier B.V., 2001 info:eu-repo/semantics/openAccess Elsevier B.V. Articles publicats en revistes (Física Aplicada)