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Stability of hydrogenated nanocrystalline silicon thin-film transistors Orpella, Albert Voz Sánchez, Cristóbal Puigdollers i González, Joaquim Dosev, D. Fonrodona Turon, Marta Soler Vilamitjana, David Bertomeu i Balagueró, Joan Asensi López, José Miguel Andreu i Batallé, Jordi Alcubilla González, Ramón Pel·lícules fines Silici Nanocristalls Semiconductors Catàlisi Deposició química en fase vapor Thin films Silicon Nanocrystals Semiconductors Catalysis Chemical vapor deposition Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays. 2013-10-29T14:53:48Z 2013-10-29T14:53:48Z 2001 2013-10-29T14:53:48Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(01)01290-1 Thin Solid Films, 2001, vol. 395, num. 1-2, p. 334-337 http://dx.doi.org/10.1016/S0040-6090(01)01290-1 (c) Elsevier B.V., 2001 info:eu-repo/semantics/openAccess Elsevier B.V. Articles publicats en revistes (Física Aplicada)