2026-04-14T02:52:21Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/473782025-12-05T14:46:49Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Orpella, Albert author Voz Sánchez, Cristóbal author Puigdollers i González, Joaquim author Dosev, D. author Fonrodona Turon, Marta author Soler Vilamitjana, David author Bertomeu i Balagueró, Joan author Asensi López, José Miguel author Andreu i Batallé, Jordi author Alcubilla González, Ramón author 2013-10-29T14:53:48Z 2013-10-29T14:53:48Z 2001 2013-10-29T14:53:48Z Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays. Pel·lícules fines Silici Nanocristalls Semiconductors Catàlisi Deposició química en fase vapor Thin films Silicon Nanocrystals Semiconductors Catalysis Chemical vapor deposition Stability of hydrogenated nanocrystalline silicon thin-film transistors