2026-04-17T05:37:49Zhttps://recercat.cat/oai/requestoai:recercat.cat:2445/473712025-12-05T14:47:39Zcom_2072_1057col_2072_478821col_2072_478917
RECERCAT
author
Fonrodona Turon, Marta
author
Gordijn, A.
author
Van Veen, M. K.
author
Van der Werf, C. H. M.
author
Bertomeu i Balagueró, Joan
author
Andreu i Batallé, Jordi
author
Schropp, Ruud E. I., 1959-
2013-10-29T13:10:22Z2013-10-29T13:10:22Z20032013-10-29T13:10:23Z
In this paper we present results on phosphorous-doped μc-Si:H by catalytic chemical vapour deposition in a reactor with an internal arrangement that does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivity of 12.8 S/cm, an activation energy of 0.026 eV and a crystalline fraction of 0.86. These values make the layers suitable to be implemented in solar cells.
(c) Elsevier B.V., 2003 info:eu-repo/semantics/openAccess
Silici
Catàlisi
Deposició química en fase vapor
Fòsfor
Cristalls
Cèl·lules solars
Pel·lícules fines
Silicon
Catalysis
Chemical vapor deposition
Phosphorus
Crystals
Solar cells
Thin films
Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD
info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion