2026-04-17T01:03:32Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/473712025-12-05T14:47:39Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Fonrodona Turon, Marta author Gordijn, A. author Van Veen, M. K. author Van der Werf, C. H. M. author Bertomeu i Balagueró, Joan author Andreu i Batallé, Jordi author Schropp, Ruud E. I., 1959- author 2013-10-29T13:10:22Z 2013-10-29T13:10:22Z 2003 2013-10-29T13:10:23Z In this paper we present results on phosphorous-doped μc-Si:H by catalytic chemical vapour deposition in a reactor with an internal arrangement that does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivity of 12.8 S/cm, an activation energy of 0.026 eV and a crystalline fraction of 0.86. These values make the layers suitable to be implemented in solar cells. Silici Catàlisi Deposició química en fase vapor Fòsfor Cristalls Cèl·lules solars Pel·lícules fines Silicon Catalysis Chemical vapor deposition Phosphorus Crystals Solar cells Thin films Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD