2026-04-20T03:04:46Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/473672025-12-05T14:48:38Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Soler Vilamitjana, David author Fonrodona Turon, Marta author Voz Sánchez, Cristóbal author Asensi López, José Miguel author Bertomeu i Balagueró, Joan author Andreu i Batallé, Jordi author 2013-10-29T12:47:52Z 2013-10-29T12:47:52Z 2003 2013-10-29T12:47:52Z We present structural and electrical properties for p- and n-type layers grown close to the transition between a-Si:H and nc-Si:H onto different substrates: Corning 1737 glass, ZnO:Al-coated glass and stainless steel. Structural properties were observed to depend on the substrate properties for samples grown under the same deposition conditions. Different behaviour was observed for n- and p-type material. Stainless steel seemed to enhance crystallinity when dealing with n-type layers, whereas an increased crystalline fraction was obtained on glass for p-type samples. Electrical conduction in the direction perpendicular to the substrate seemed to be mainly determined by the interfaces or by the existence of an amorphous incubation layer that might determine the electrical behaviour. In the direction perpendicular to the substrate, n-type layers exhibited a lower resistance value than p-type ones, showing better contact properties between the layer and the substrate. Deposició química en fase vapor Catàlisi Silici Nanocristalls Cèl·lules solars Pel·lícules fines Propietats elèctriques Chemical vapor deposition Catalysis Silicon Nanocrystals Solar cells Thin films Electric properties Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD