2026-04-14T02:48:13Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/472862025-12-05T14:47:59Zcom_2072_1057col_2072_478821col_2072_478917

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition Voz Sánchez, Cristóbal Peiró, D. Fonrodona Turon, Marta Soler Vilamitjana, David Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Silici Nanocristalls Deposició química en fase vapor Cèl·lules solars Silicon Nanocrystals Chemical vapor deposition Solar cells Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance. 2013-10-25T08:08:51Z 2013-10-25T08:08:51Z 2000 2013-10-25T08:08:51Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0927-0248(00)00030-1 Solar Energy Materials and Solar Cells, 2000, vol. 63, num. 3, p. 237-246 http://dx.doi.org/10.1016/S0927-0248(00)00030-1 (c) Elsevier B.V., 2000 info:eu-repo/semantics/openAccess Elsevier B.V. Articles publicats en revistes (Física Aplicada)