2026-04-13T06:33:03Zhttps://recercat.cat/oai/request
oai:recercat.cat:2445/472862025-12-05T14:47:59Zcom_2072_1057col_2072_478821col_2072_478917
RECERCAT author Voz Sánchez, Cristóbal author Peiró, D. author Fonrodona Turon, Marta author Soler Vilamitjana, David author Bertomeu i Balagueró, Joan author Andreu i Batallé, Jordi 2013-10-25T08:08:51Z2013-10-25T08:08:51Z20002013-10-25T08:08:51Z Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance. (c) Elsevier B.V., 2000 info:eu-repo/semantics/openAccess Silici Nanocristalls Deposició química en fase vapor Cèl·lules solars Silicon Nanocrystals Chemical vapor deposition Solar cells Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion