2026-04-17T18:37:47Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/472862025-12-05T14:47:59Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Voz Sánchez, Cristóbal author Peiró, D. author Fonrodona Turon, Marta author Soler Vilamitjana, David author Bertomeu i Balagueró, Joan author Andreu i Batallé, Jordi author 2013-10-25T08:08:51Z 2013-10-25T08:08:51Z 2000 2013-10-25T08:08:51Z Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance. Silici Nanocristalls Deposició química en fase vapor Cèl·lules solars Silicon Nanocrystals Chemical vapor deposition Solar cells Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition