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oai:recercat.cat:2445/472852025-12-05T14:48:14Zcom_2072_1057col_2072_478821col_2072_478917

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C Muñoz Ramos, David Voz Sánchez, Cristóbal Martin Garcia, Isidro Orpella, Albert Puigdollers i González, Joaquim Alcubilla González, Ramón Villar, Fernando Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Damon-Lacoste, J. Roca i Cabarrocas, P. (Pere) Deposició química en fase vapor Cèl·lules solars Teoria quàntica Microelectrònica Chemical vapor deposition Solar cells Quantum theory Microelectronics In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact. 2013-10-25T07:39:44Z 2013-10-25T07:39:44Z 2008 2013-10-25T07:39:46Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion 0040-6090 https://hdl.handle.net/2445/47285 554454 eng Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.192 Thin Solid Films, 2008, vol. 516, num. 5, p. 761-764 http://dx.doi.org/10.1016/j.tsf.2007.06.192 (c) Elsevier B.V., 2008 info:eu-repo/semantics/openAccess 14 p. application/pdf Elsevier B.V. Articles publicats en revistes (Física Aplicada)