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oai:recercat.cat:2445/471482025-11-19T11:00:21Zcom_2072_1057col_2072_478821col_2072_478917

urn:hdl:2445/47148 Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD Muñoz Ramos, David Voz Sánchez, Cristóbal Blanque, S. Ibarz, D. Bertomeu i Balagueró, Joan Alcubilla González, Ramón Deposició química en fase vapor Alumini Cèl·lules solars Làsers Corrosió i anticorrosius Semiconductors Chemical vapor deposition Aluminum Solar cells Lasers Corrosion and anti-corrosives Semiconductors In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device. 2013-10-18T09:17:27Z 2013-10-18T09:17:27Z 2009 2013-10-18T09:17:27Z info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.mseb.2008.10.049 Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2009, vol. 159-160, p. 23-26 http://dx.doi.org/10.1016/j.mseb.2008.10.049 (c) Elsevier B.V., 2009 info:eu-repo/semantics/openAccess Elsevier B.V. Articles publicats en revistes (Física Aplicada)