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oai:recercat.cat:2445/346622025-12-05T14:48:49Zcom_2072_1057col_2072_478821col_2072_478917

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments Kail, F. Farjas Silva, Jordi Roura Grabulosa, Pere Secouard, C. Nos Aguilà, Oriol Bertomeu i Balagueró, Joan Alzina Sureda, Francesc Roca i Cabarrocas, P. (Pere) Semiconductors amorfs Calorimetria Hidrogen Silici Espectroscòpia Raman Amorphous semiconductors Calorimetry Hydrogen Silicon Raman spectroscopy The structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon. 2013-04-19T10:51:54Z 2013-04-19T10:51:54Z 2010 2013-04-19T10:51:54Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion 0003-6951 https://hdl.handle.net/2445/34662 579121 eng Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3464961 Applied Physics Letters, 2010, vol. 97, num. 3, p. 031918-1-031918-3 http://dx.doi.org/10.1063/1.3464961 (c) American Institute of Physics , 2010 info:eu-repo/semantics/openAccess 3 p. application/pdf American Institute of Physics Articles publicats en revistes (Física Aplicada)