2026-04-19T22:14:43Zhttps://recercat.cat/oai/requestoai:recercat.cat:2445/346622025-12-05T14:48:49Zcom_2072_1057col_2072_478821col_2072_478917
RECERCAT
author
Kail, F.
author
Farjas Silva, Jordi
author
Roura Grabulosa, Pere
author
Secouard, C.
author
Nos Aguilà, Oriol
author
Bertomeu i Balagueró, Joan
author
Alzina Sureda, Francesc
author
Roca i Cabarrocas, P. (Pere)
2013-04-19T10:51:54Z2013-04-19T10:51:54Z20102013-04-19T10:51:54Z
The structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.
(c) American Institute of Physics , 2010 info:eu-repo/semantics/openAccess
Semiconductors amorfs
Calorimetria
Hidrogen
Silici
Espectroscòpia Raman
Amorphous semiconductors
Calorimetry
Hydrogen
Silicon
Raman spectroscopy
Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion