2026-04-19T14:08:45Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/346622025-12-05T14:48:49Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Kail, F. author Farjas Silva, Jordi author Roura Grabulosa, Pere author Secouard, C. author Nos Aguilà, Oriol author Bertomeu i Balagueró, Joan author Alzina Sureda, Francesc author Roca i Cabarrocas, P. (Pere) author 2013-04-19T10:51:54Z 2013-04-19T10:51:54Z 2010 2013-04-19T10:51:54Z The structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon. Semiconductors amorfs Calorimetria Hidrogen Silici Espectroscòpia Raman Amorphous semiconductors Calorimetry Hydrogen Silicon Raman spectroscopy Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments