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oai:recercat.cat:2445/322202025-12-04T21:33:33Zcom_2072_1057col_2072_478812col_2072_478917

00925njm 22002777a 4500 dc Pérez Rodríguez, Alejandro author Cornet i Calveras, Albert author Morante i Lleonart, Joan Ramon author Jiménez, J. author Hemment, Peter L. F. author Homewood, K. P. author 2012-10-08T12:49:00Z 2012-10-08T12:49:00Z 1991 2012-10-08T12:49:00Z An analysis of silicon on insulator structures obtained by single and multiple implants by means of Raman scattering and photoluminescence spectroscopy is reported. The Raman spectra obtained with different excitation powers and wavelengths indicate the presence of a tensile strain in the top silicon layer of the structures. The comparison between the spectra measured in both kinds of samples points out the existence in the multiple implant material of a lower strain for a penetration depth about 300 nm and a higher strain for higher penetration depths. These results have been correlated with transmission electron microscopy observations, which have allowed to associate the higher strain to the presence of SiO2 precipitates in the top silicon layer, close to the buried oxide. The found lower strain is in agreement with the better quality expected for this material, which is corroborated by the photoluminescence data. Pel·lícules fines Estructura electrònica Nanoestructures Thin films Electronic structure Nanostructures Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants