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Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films Fontcuberta i Griñó, Josep Bibes, Manuel Martínez Perea, Benjamin Trtik, V. Ferrater Martorell, Cèsar Sánchez Barrera, Florencio Varela Fernández, Manuel, 1956- Pel·lícules fines Anisotropia Magnetisme Làsers Thin films Anisotropy Magnetism Lasers We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. 2012-05-03T07:01:32Z 2012-05-03T07:01:32Z 1999-04-15 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion 0021-8979 https://hdl.handle.net/2445/24789 145903 eng Reproducció del document publicat a: http://dx.doi.org/10.1063/1.370486 Journal of Applied Physics, 1999, vol. 85, núm. 8, p. 4800-4802 http://dx.doi.org/10.1063/1.370486 (c) American Institute of Physics, 1999 info:eu-repo/semantics/openAccess 3 p. application/pdf American Institute of Physics Articles publicats en revistes (Física Aplicada)