2026-04-17T03:49:10Zhttps://recercat.cat/oai/request
oai:recercat.cat:2445/247872025-11-19T11:00:15Zcom_2072_1057col_2072_478821col_2072_478917
RECERCAT author Asensi López, José Miguel author Merten, Jens author Voz Sánchez, Cristóbal author Andreu i Batallé, Jordi 2012-05-03T06:51:21Z2012-05-03T06:51:21Z1999-03-012012-04-25T10:30:11Z An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective ¿¿ product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance. (c) American Institute of Physics, 1999 info:eu-repo/semantics/openAccess Cèl·lules solars Cèl·lules fotovoltaiques Camps elèctrics Simulació per ordinador Solar cells Photovoltaic cells Electric fields Computer simulation Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion