2026-04-18T03:44:54Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/1953632025-11-19T11:00:16Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Rovira, David author Ros Costals, Eloi author Tom, Thomas author Jiménez, Maykel author Asensi López, José Miguel author Voz Sánchez, Cristóbal author López Vidrier, Julià author Puigdollers i González, Joaquim author Bertomeu i Balagueró, Joan author Saucedo Silva, Edgardo author 2023-03-16T08:50:35Z 2023-03-16T08:50:35Z 2023-02-04 2023-03-16T08:50:35Z High open-circuit voltage in Sb2Se3 thin-film solar cells is a key challenge in the development of earth-abundant photovoltaic devices. CdS selective layers have been used as the standard electron contact in this technology. Long-term scalability issues due to cadmium toxicity and environmental impact are of great concern. In this study, we propose a ZnO-based buffer layer with a polymer-film-modified top interface to replace CdS in Sb2Se3 photovoltaic devices. The branched polyethylenimine layer at the ZnO and transparent electrode interface enhanced the performance of Sb2Se3 solar cells. An important increase in open-circuit voltage from 243 mV to 344 mV and a maximum efficiency of 2.4% was achieved. This study attempts to establish a relation between the use of conjugated polyelectrolyte thin films in chalcogenide photovoltaics and the resulting device improvements. Polielectròlits Moments dipolars Polyelectrolytes Dipole moments Polymeric interlayer in CdS-free Electron-Selective Contact for Sb2Se3 thin-film solar cells