2026-04-17T00:41:36Zhttps://recercat.cat/oai/request
oai:recercat.cat:2445/1884412025-12-05T14:48:19Zcom_2072_1057col_2072_478821col_2072_478905col_2072_478917
RECERCAT author Blázquez Gómez, Josep Oriol author Frieiro Castro, Juan Luis author López Vidrier, Julià author Guillaume, Clément author Portier, X. author Labbé, Christophe author Hernández Márquez, Sergi author Garrido Fernández, Blas 2022-08-26T10:22:12Z2022-08-26T10:22:12Z2019-12-142022-08-26T10:22:12Z We report on light-activated electroforming of ZnO/p-Si heterojunction memristors with transparent indium tin oxide as the top electrode. Light-generated electron-hole pairs in the p-type substrate are separated by the external electric field and electrons are injected into the active ZnO layer. The additional application of voltage pulses allows achieving different resistance states that end up in the realization of the low resistance state (LRS). This process requires much less voltage compared to dark conditions, thus avoiding undesired current overshoots and achieving a self-compliant device. The transport mechanisms governing each resistance state are studied and discussed. An evolution from an electrode-limited to a space charge-limited transport is observed along the electroforming process before reaching the LRS, which is ascribed to the progressive formation of conductive paths that consequently induce the growth of conductive nanofilaments through the ZnO layer. This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales para la Formación de-Doctores" from the Spanish Ministry of Economy and Competitiveness for economical support. J.L.F. acknowledges the subprogram "Ayudas para la Formación de Profesorado Universitario" (No. FPU16/06257) from the Spanish Ministry of Education, Culture and Sports for economical support. X.P., C.L., and C.G. are grateful to C. Frilay for his expertise in the maintenance of the sputtering setup used for the growth of the ZnO films. (c) American Institute of Physics (AIP), 2019 info:eu-repo/semantics/openAccess Fotolitografia Fotoelectricitat Semiconductors Photolithography Photoelectricity Semiconductors Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion