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               <dc:title>Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells</dc:title>
               <dc:creator>Tom, Thomas</dc:creator>
               <dc:creator>López-Pintó, Nicolau</dc:creator>
               <dc:creator>Asensi López, José Miguel</dc:creator>
               <dc:creator>Andreu i Batallé, Jordi</dc:creator>
               <dc:creator>Bertomeu i Balagueró, Joan</dc:creator>
               <dc:creator>Ros Costals, Eloi</dc:creator>
               <dc:creator>Puigdollers i González, Joaquim</dc:creator>
               <dc:creator>Voz Sánchez, Cristóbal</dc:creator>
               <dc:subject>Silici</dc:subject>
               <dc:subject>Cèl·lules solars</dc:subject>
               <dc:subject>Metalls de transició</dc:subject>
               <dc:subject>Silicon</dc:subject>
               <dc:subject>Solar cells</dc:subject>
               <dc:subject>Transition metals</dc:subject>
               <dc:description>As optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific growth mechanism of each material, for instance a percolation threshold thickness is present in Volmer-Webber growth of materials such as silver. In this paper, we explore the introduction of aluminum in silver films as a mechanism to grow ultrathin metallic films of high transparency and low sheet resistance, suitable for many optoelectronic applications. Furthermore, we implemented such ultra-thin metallic films in Dielectric/Metal/Dielectric (DMD) structures based on Aluminum-doped Zinc Oxide (AZO) as the dielectric with an ultra-thin silver aluminum (Ag:Al) metallic interlayer. The multilayer structures were deposited by magnetron sputtering, which offers an industrial advantage and superior reliability over thermally evaporated DMDs. Finally, we tested the optimized DMD structures as a front contact for n-type silicon solar cells by introducing a hole-selective vanadium pentoxide (V2O5) dielectric layer.</dc:description>
               <dc:date>2020-11-02T11:24:24Z</dc:date>
               <dc:date>2020-11-02T11:24:24Z</dc:date>
               <dc:date>2020-10-31</dc:date>
               <dc:date>2020-11-02T11:24:24Z</dc:date>
               <dc:type>info:eu-repo/semantics/article</dc:type>
               <dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
               <dc:relation>Reproducció del document publicat a: https://doi.org/10.3390/ma13214905</dc:relation>
               <dc:relation>Materials, 2020, vol. 13, num. 21, p. 4905</dc:relation>
               <dc:relation>https://doi.org/10.3390/ma13214905</dc:relation>
               <dc:rights>cc-by (c) Tom, Thomas et al., 2020</dc:rights>
               <dc:rights>http://creativecommons.org/licenses/by/3.0/es</dc:rights>
               <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
               <dc:publisher>MDPI</dc:publisher>
               <dc:source>Articles publicats en revistes (Física Aplicada)</dc:source>
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