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               <dc:title>Adsorption of atomic oxygen and nitrogen at β-cristobalite (100): a density functionaly theory study</dc:title>
               <dc:creator>Arasa Cid, Carina</dc:creator>
               <dc:creator>Gamallo Belmonte, Pablo</dc:creator>
               <dc:creator>Sayós Ortega, Ramón</dc:creator>
               <dc:subject>Adsorció</dc:subject>
               <dc:subject>Teoria del funcional de densitat</dc:subject>
               <dc:subject>Quimiosorció</dc:subject>
               <dc:subject>Adsorption</dc:subject>
               <dc:subject>Density functionals</dc:subject>
               <dc:subject>Chemisorption</dc:subject>
               <dc:description>The adsorption of atomic oxygen and nitrogen on the -cristobalite (100) surface is investigated from first principles density functional calculations within the generalized gradient approximation. A periodic SiO2 slab model (6 layers relaxing 4 or 6) ended with a layer of Si or O atoms is employed throughout the study. Several adsorption minima and diffusion transition states have been characterized for the two lowest spin states of both systems. A strong chemisorption is found for either O or N in several sites with both slab endings (e.g., it is found an average adsorption energy of 5.89 eV for O (singlet state) and 4.12 eV for N (doublet state) over the Si face). The approach of O or N on top O gives place to the O2 and NO abstraction reactions without energy barriers. Atomic sticking coefficients and desorption rate constants have been estimated (300 - 1900 K) by using the standard transition state theory. The high adsorption energies found for O and N over silica point out that the atomic recombination processes (i.e., Eley-Rideal and Langmuir-Hinshelwood mechanisms) will play a more important role in the atomic detachment processes than the thermal desorption processes. Furthermore, the different behavior observed for the O and N thermal desorption processes suggests that the published kinetic models for atomic O and N recombination reactions on SiO2 surfaces, based on low adsorption energies (e.g., 3.5 eV for both O and N ), should probably be revised.</dc:description>
               <dc:date>2020-06-04T14:00:25Z</dc:date>
               <dc:date>2020-06-04T14:00:25Z</dc:date>
               <dc:date>2005</dc:date>
               <dc:date>2020-06-04T14:00:25Z</dc:date>
               <dc:type>info:eu-repo/semantics/article</dc:type>
               <dc:type>info:eu-repo/semantics/acceptedVersion</dc:type>
               <dc:relation>Versió postprint del document publicat a: https://doi.org/10.1021/JP044064Y</dc:relation>
               <dc:relation>Journal of Physical Chemistry B, 2005, vol. 109, num. 31, p. 14954-14964</dc:relation>
               <dc:relation>https://doi.org/10.1021/JP044064Y</dc:relation>
               <dc:rights>(c) American Chemical Society , 2005</dc:rights>
               <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
               <dc:publisher>American Chemical Society</dc:publisher>
               <dc:source>Articles publicats en revistes (Ciència dels Materials i Química Física)</dc:source>
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