2026-04-17T03:20:16Zhttps://recercat.cat/oai/requestoai:recercat.cat:2445/1597712025-12-04T20:41:45Zcom_2072_1057col_2072_478822col_2072_478917
RECERCAT
author
Macià Bros, Ferran
author
Wang, Fujian
author
Harmon, Nicholas
author
Wohlgenannt, M.
author
Kent, A. D.
author
Flatté, Michael E.
2020-05-12T15:13:01Z2020-05-12T15:13:01Z20132020-05-12T15:13:01Z
Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length.
(c) American Institute of Physics , 2013 info:eu-repo/semantics/openAccess
Ferromagnetisme
Semiconductors orgànics
Pel·lícules fines
Ferromagnetism
Organic semiconductors
Thin films
Hysteretic control of organic conductance due to remanent magnetic fringe fields
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion