2026-04-04T00:58:17Zhttps://recercat.cat/oai/request

oai:recercat.cat:2445/1597712025-12-04T20:41:45Zcom_2072_1057col_2072_478822col_2072_478917

00925njm 22002777a 4500 dc Macià Bros, Ferran author Wang, Fujian author Harmon, Nicholas author Wohlgenannt, M. author Kent, A. D. author Flatté, Michael E. author 2020-05-12T15:13:01Z 2020-05-12T15:13:01Z 2013 2020-05-12T15:13:01Z Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length. Ferromagnetisme Semiconductors orgànics Pel·lícules fines Ferromagnetism Organic semiconductors Thin films Hysteretic control of organic conductance due to remanent magnetic fringe fields