2026-04-03T23:45:37Zhttps://recercat.cat/oai/requestoai:recercat.cat:2445/1597712025-12-04T20:41:45Zcom_2072_1057col_2072_478822col_2072_478917
urn:hdl:2445/159771
Hysteretic control of organic conductance due to remanent magnetic fringe fields
Macià Bros, Ferran
Wang, Fujian
Harmon, Nicholas
Wohlgenannt, M.
Kent, A. D.
Flatté, Michael E.
Ferromagnetisme
Semiconductors orgànics
Pel·lícules fines
Ferromagnetism
Organic semiconductors
Thin films
Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length.
2020-05-12T15:13:01Z
2020-05-12T15:13:01Z
2013
2020-05-12T15:13:01Z
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Reproducció del document publicat a: https://doi.org/10.1063/1.4790141
Applied Physics Letters, 2013, vol. 102, num. 042408
https://doi.org/10.1063/1.4790141
(c) American Institute of Physics , 2013
info:eu-repo/semantics/openAccess
American Institute of Physics
Articles publicats en revistes (Física de la Matèria Condensada)