<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-18T08:29:46Z</responseDate><request verb="GetRecord" identifier="oai:www.recercat.cat:2445/134282" metadataPrefix="oai_dc">https://recercat.cat/oai/request</request><GetRecord><record><header><identifier>oai:recercat.cat:2445/134282</identifier><datestamp>2025-12-04T21:01:58Z</datestamp><setSpec>com_2072_1057</setSpec><setSpec>col_2072_478796</setSpec><setSpec>col_2072_478917</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
   <dc:title>Columnar-to-Disk Structural Transition in Nanoscale (SiO2)N Clusters</dc:title>
   <dc:creator>Bromley, Stefan Thomas</dc:creator>
   <dc:creator>Flikkema, Edwin</dc:creator>
   <dc:subject>Nanoestructures</dc:subject>
   <dc:subject>Nanotecnologia</dc:subject>
   <dc:subject>Nanostructures</dc:subject>
   <dc:subject>Nanotechnology</dc:subject>
   <dc:description>Extensive large-scale global optimizations refined by ab initio calculations are used to propose ( SiO 2 ) N N = 14 - 27 ground states. For N &lt; 23 clusters are columnar and show N − odd - N − even stability, energetically and electronically. At N = 23 a columnar-to-disk structural transition occurs reminiscent of that observed for Si N . These transitions differ in nature but have the same basis, linking the nanostructural behavior of an element (Si) and its oxide ( SiO 2 ). Considering the impact of devices based on the nanoscale manipulation of Si / SiO 2 the result is of potential technological importance.</dc:description>
   <dc:date>2019-05-31T11:43:36Z</dc:date>
   <dc:date>2019-05-31T11:43:36Z</dc:date>
   <dc:date>2005-10-28</dc:date>
   <dc:date>2019-05-31T11:43:36Z</dc:date>
   <dc:type>info:eu-repo/semantics/article</dc:type>
   <dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
   <dc:identifier>0031-9007</dc:identifier>
   <dc:identifier>https://hdl.handle.net/2445/134282</dc:identifier>
   <dc:identifier>603220</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>Reproducció del document publicat a: https://doi.org/10.1103/PhysRevLett.95.185505</dc:relation>
   <dc:relation>Physical Review Letters, 2005, vol. 95, num. 18, p. 185505</dc:relation>
   <dc:relation>https://doi.org/10.1103/PhysRevLett.95.185505</dc:relation>
   <dc:rights>(c) American Physical Society, 2005</dc:rights>
   <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
   <dc:format>4 p.</dc:format>
   <dc:format>application/pdf</dc:format>
   <dc:publisher>American Physical Society</dc:publisher>
   <dc:source>Articles publicats en revistes (Ciència dels Materials i Química Física)</dc:source>
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