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oai:recercat.cat:2445/131712025-11-19T11:00:40Zcom_2072_1057col_2072_478821col_2072_478917

00925njm 22002777a 4500 dc Laukhin, Vladimir author Skumryev, Vassil Hristov author Martí, X. author Hrabovsky, D. author Sánchez Barrera, Florencio author García-Cuenca Varona, María Victoria author Ferrater Martorell, Cèsar author Varela Fernández, Manuel, 1956- author Lüders, R. author Bobo, J. F. author Fontcuberta i Griñó, Josep author 2010-06-25T08:28:29Z 2010-06-25T08:28:29Z 2006 The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. Electrònica quàntica Semiconductors Microelectrònica Qunatum electronics Semiconductors Microelectronics Electric-field control of exchange bias in multiferroic epitaxial heterostructures