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00925njm 22002777a 4500 dc Valmianski, I. author Gabriel Ramirez, Juan author Urban, C. author Batlle Gelabert, Xavier author Schuller, Ivan K. author 2018-04-30T13:17:31Z 2018-04-30T13:17:31Z 2017-04-18 2018-04-30T13:17:31Z We found atypical pressure dependence in the transport measurements of the metal to insulator transition (MIT) in epitaxial thin films of vanadium sesquioxide (V2O3). Three different crystallographic orientations and four thicknesses, ranging from 40 to 500 nm, were examined under hydrostatic pressures (P-h) of up to 1.5 GPa. All of the films at transition exhibited a four order of magnitude resistance change, with transition temperatures ranging from 140 to 165 K, depending on the orientation. This allowed us to build pressure-temperature phase diagrams of several orientations and film thicknesses. Interestingly, for pressures below 500 MPa, all samples deviate from bulk behavior and show a weak transition temperature (T-c) pressure dependence (dT(c)/dP(h) = 1.2 x 10(-2) +/- 0.3 x 10(-2) K/MPa), which recovers to bulklike behavior (3.9 x 10(-2) +/- 0.3 x 10(-2) K/MPa) at higher pressures. Furthermore, we found that pressurization leads to morphological but not structural changes in the films. This indicates that the difference in the thin film and bulk pressure-temperature phase diagrams is most probably due to pressure-induced grain boundary relaxation, as well as both plastic and elastic deformations in the film microstructure. These results highlight the difference between bulk and thin films behaviors. Propietats elèctriques Matèria condensada Electric properties Condensed matter Deviation from bulk in the pressure-temperature phase diagram of V2O3 thin films