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Systematics of properties of the electron gas in deep-etched quantum wires Martorell Domenech, Juan Sprung, Donald W. L. Superfícies (Física) Semiconductors Propietats elèctriques Surfaces (Physics) Semiconductors Electric properties An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods. 2009-12-24T08:30:21Z 2009-12-24T08:30:21Z 1996 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion 0163-1829 https://hdl.handle.net/2445/10466 146885 eng Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.54.11386 Physical Review B, 1996, vol. 54, núm. 11, p. 11386-11396 http://dx.doi.org/10.1103/PhysRevB.54.11386 (c) The American Physical Society, 1996 info:eu-repo/semantics/openAccess 11 p. application/pdf The American Physical Society Articles publicats en revistes (Física Quàntica i Astrofísica)