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oai:recercat.cat:2445/104662025-12-05T16:43:05Zcom_2072_1057col_2072_478823col_2072_478917

00925njm 22002777a 4500 dc Martorell Domenech, Juan author Sprung, Donald W. L. author 2009-12-24T08:30:21Z 2009-12-24T08:30:21Z 1996 An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods. Superfícies (Física) Semiconductors Propietats elèctriques Surfaces (Physics) Semiconductors Electric properties Systematics of properties of the electron gas in deep-etched quantum wires