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oai:recercat.cat:2117/986512026-02-07T05:42:48Zcom_2072_1033col_2072_452950

Atomic displacements accompanying deformation twinning: shears and shuffles Pond, Robert C. Hirth, John Serra Tort, Ana María Bacon, D.J Universitat Politècnica de Catalunya. Departament d'Enginyeria Civil i Ambiental Àrees temàtiques de la UPC::Enginyeria dels materials Twinning (Crystallography) Twin growth Disconnections Atomic-scale simulation Shear and shuffle displacements Dislocacions en cristalls Deformation twins grow by the motion of disconnections along their interfaces, thereby coupling shear with migration. Atomic-scale simulations of this mechanism have advanced to the point where the trajectory of each atom can be followed as it transits from a site in the shrinking grain, through the interface, and onwards to a site in the growing twin. Historically, such trajectories have been factorised into shear and shuffle components according to some defined convention. In the present article, we introduce a method of factorisation consistent with disconnection motion. This procedure is illustrated for the case of {10-12} < 10-1-1> twinning in hcp materials, and shown to agree with simulated atomic trajectories for Zr. Peer Reviewed Postprint (published version) 2016-04 Article Pond, R.C., Hirth, J., Serra, A., Bacon, D.J. Atomic displacements accompanying deformation twinning: shears and shuffles. "Materials research letters", Abril 2016, vol. 4, núm. 4, p. 185-190. 2166-3831 https://hdl.handle.net/2117/98651 10.1080/21663831.2016.1165298 eng http://www.tandfonline.com/doi/full/10.1080/21663831.2016.1165298?src=recsys http://creativecommons.org/licenses/by/3.0/es/ Open Access 6 p. application/pdf Taylor & Francis Ltd.