<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-14T05:06:39Z</responseDate><request verb="GetRecord" identifier="oai:www.recercat.cat:2117/86312" metadataPrefix="oai_dc">https://recercat.cat/oai/request</request><GetRecord><record><header><identifier>oai:recercat.cat:2117/86312</identifier><datestamp>2026-01-16T09:24:48Z</datestamp><setSpec>com_2072_1033</setSpec><setSpec>col_2072_452950</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
   <dc:title>FET noise-parameter determination using a novel technique based on 50 noise measurements</dc:title>
   <dc:creator>Lázaro Guillén, Antoni</dc:creator>
   <dc:creator>Pradell i Cara, Lluís</dc:creator>
   <dc:creator>O'Callaghan Castellà, Juan Manuel</dc:creator>
   <dc:contributor>Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions</dc:contributor>
   <dc:contributor>Universitat Politècnica de Catalunya. RF&amp;MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones</dc:contributor>
   <dc:subject>Àrees temàtiques de la UPC::Enginyeria electrònica</dc:subject>
   <dc:subject>Hearing</dc:subject>
   <dc:subject>Acoustic reflection</dc:subject>
   <dc:subject>Calibration</dc:subject>
   <dc:subject>Oïda</dc:subject>
   <dc:description>A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain–current and gate–length is obtained.</dc:description>
   <dc:description>Peer Reviewed</dc:description>
   <dc:description>Postprint (published version)</dc:description>
   <dc:date>1999-03</dc:date>
   <dc:type>Article</dc:type>
   <dc:identifier>Lazaro, A., Pradell, L., O'callaghan, J. FET noise-parameter determination using a novel technique based on 50 noise measurements. "IEEE transactions on microwave theory and techniques", Març 1999, vol. 47, núm. 3, p. 315-324.</dc:identifier>
   <dc:identifier>0018-9480</dc:identifier>
   <dc:identifier>https://hdl.handle.net/2117/86312</dc:identifier>
   <dc:identifier>10.1109/22.750233</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&amp;arnumber=750233</dc:relation>
   <dc:rights>Open Access</dc:rights>
   <dc:format>10 p.</dc:format>
   <dc:format>application/pdf</dc:format>
   <dc:publisher>IEEE Microwave Theory and Techniques Society</dc:publisher>
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