2026-04-14T07:28:39Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/863062025-07-17T07:40:00Zcom_2072_1033col_2072_452950

Direct extraction of all four transistor noise parameters from 50 noise figure measurements Lázaro Guillén, Antoni Pradell i Cara, Lluís Beltrán, A O'Callaghan Castellà, Juan Manuel Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones Àrees temàtiques de la UPC::Enginyeria electrònica Electronics Electrònica A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C, ,INT, C,,7NT, Re(C,, Peer Reviewed Postprint (published version) 1998-02 Article Lazaro, A., Pradell, L., Beltrán, A., O'callaghan, J. Direct extraction of all four transistor noise parameters from 50 noise figure measurements. "Electronics Letters", Febrer 1998, vol. 34, núm. 3, p. 289-291. 0013-5194 https://hdl.handle.net/2117/86306 eng Open Access 3 p. application/pdf Institution of Electrical Engineers