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Localization and electrical characterization of interconnect open defects Rodríguez Montañés, Rosa Arumi Delgado, Daniel Figueras Pàmies, Joan Beverloo, Willem Vries, Dirk K. de Eichenberger, Stefan Volf, Paul A. J. Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica Universitat Politècnica de Catalunya. Departament de Disseny i Programació de Sistemes Electrònics Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics Integrated circuits Metal oxide semiconductors, Complementary Circuits integrats Metall òxid semiconductors complementaris A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived from attenuation and phase shift measurements. The characteristic defect-free impedance of the line and its propagation constant are considered to be unknowns, and their values are also derived from the above measurements. In this way, the impact of process parameter variations on the proposed model is diminished. The experimental setup required to perform the characterization measurements and a simple graphical procedure to determine the defect and line parameters are presented. Experimental results show a good agreement between the predicted location of the open and its real location, found by optical beam induced resistance change inspection. Errors smaller than 2% of the total length of the line have been observed in the experiments. Postprint (published version) 2010-02 Article Rodríguez, R. [et al.]. Localization and electrical characterization of interconnect open defects. "IEEE transactions on semiconductor manufacturing", Febrer 2010, vol. 23, núm. 1, p. 65-76. 0894-6507 https://hdl.handle.net/2117/7803 eng http://sauwok.fecyt.es/apps/InboundService.do?product=CCC&action=retrieve&SrcApp=EndNoteWeb&UT=000274212900008&SID=P2LEGFKnEeCLg1ENIBo&SrcAuth=ISIResearchSoft&mode=FullRecord&customersID=ISIResearchSoft&DestFail=http://access.isiproducts.com/custom_images/wok_failed_auth.html Open Access 12 p. application/pdf