2026-04-13T13:45:43Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/74702026-01-30T08:21:27Zcom_2072_1033col_2072_452950

Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation López González, Juan Miguel Schröter, Michael Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies Àrees temàtiques de la UPC::Enginyeria electrònica Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors Semiconductors Electrònica Semiconductors This paper studies the effect of emitter width on the dc current gain, βF , and ac figures of merit, cut-off frequency, f T, and maximum oscillation frequency, f max, of realistic structures for 200 GHz SiGe heterojunction bipolar transistors (HBTs) using two-dimensional drift-diffusion (DD), hydrodynamic (HD) and energy balance (EB) simulations. The carrier transport models used are briefly presented. The SiGe-HBTs studied have a base thickness of 15 nm. Results of the three transport models are shown and analyzed, for the different emitter geometries. Postprint (published version) 2009-09 Article Lopez, J.; Schröter, M. Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation. "Semiconductor science and technology", Setembre 2009, vol. 24, núm. 11, p. 5005-5012. 0268-1242 https://hdl.handle.net/2117/7470 10.1088/0268-1242/24/11/115005 eng Restricted access - publisher's policy 8 p. application/pdf