2026-04-13T03:32:24Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/6712025-07-17T05:23:23Zcom_2072_1033col_2072_452950

Fet noise-parameter determination using a novel technique based on 50 noise measurements Lázaro Guillén, Antoni Pradell i Cara, Lluís O'Callaghan Castellà, Juan Manuel Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques Microwave measurements calibration electric noise measurement equivalent circuits microwave field effect transistors microwave measurement semiconductor device measurement semiconductor device models semiconductor device noise Microones -- Dispositius A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C11INT, C22INT, Re(C12 INT), Im(C12INT)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tuner-based methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained. Peer Reviewed 1999 Article Open Access IEEE