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oai:recercat.cat:2117/6712025-07-17T05:23:23Zcom_2072_1033col_2072_452950

Fet noise-parameter determination using a novel technique based on 50 noise measurements Lázaro Guillén, Antoni Pradell i Cara, Lluís O'Callaghan Castellà, Juan Manuel Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques Microwave measurements calibration electric noise measurement equivalent circuits microwave field effect transistors microwave measurement semiconductor device measurement semiconductor device models semiconductor device noise Microones -- Dispositius A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C11INT, C22INT, Re(C12 INT), Im(C12INT)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tuner-based methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained. Peer Reviewed 1999 Article Lazaro, A.; Pradell, L.; O'Callaghan, J.M. FET noise-parameter determination using a novel technique based on 50-Ω noise-figure measurements. IEEE Transactions on microwave theory and techniques, 1999, vol.47, issue 3, p. 315-324 0018-9480 https://hdl.handle.net/2117/671 eng Open Access 315-324 application/pdf IEEE