<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-13T07:32:16Z</responseDate><request verb="GetRecord" identifier="oai:www.recercat.cat:2117/442402" metadataPrefix="oai_dc">https://recercat.cat/oai/request</request><GetRecord><record><header><identifier>oai:recercat.cat:2117/442402</identifier><datestamp>2026-01-23T09:39:19Z</datestamp><setSpec>com_2072_1033</setSpec><setSpec>col_2072_452950</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
   <dc:title>Synergistic effects of high-pressure processing and interface engineering in Sb2Se3/CdS photovoltaic devices</dc:title>
   <dc:creator>Jiménez Guerra, Maykel</dc:creator>
   <dc:creator>Caño Prades, Ivan</dc:creator>
   <dc:creator>Jiménez Arguijo, Alex</dc:creator>
   <dc:creator>Navarro Güell, Alejandro</dc:creator>
   <dc:creator>Gon Medaille, Axel</dc:creator>
   <dc:creator>Calvo Barrio, Lorenzo</dc:creator>
   <dc:creator>Armelín Diggroc, Elaine Aparecida</dc:creator>
   <dc:creator>Madhani Mohammed Sadhakathullah, Ahammed Hussain</dc:creator>
   <dc:creator>Placidi, Marcel Jose</dc:creator>
   <dc:creator>Sánchez González, Yudania</dc:creator>
   <dc:creator>Puigdollers i González, Joaquim</dc:creator>
   <dc:creator>Saucedo Silva, Edgardo Ademar</dc:creator>
   <dc:contributor>Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica</dc:contributor>
   <dc:contributor>Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica</dc:contributor>
   <dc:contributor>Universitat Politècnica de Catalunya. Departament d'Enginyeria Química</dc:contributor>
   <dc:contributor>Universitat Politècnica de Catalunya. MNT-Solar  - Grup de Micro i Nano Tecnologies per Energia Solar</dc:contributor>
   <dc:contributor>Universitat Politècnica de Catalunya. IMEM-BRT- Innovation in Materials and Molecular Engineering - Biomaterials for Regenerative Therapies</dc:contributor>
   <dc:subject>Àrees temàtiques de la UPC::Enginyeria química</dc:subject>
   <dc:subject>Àrees temàtiques de la UPC::Energies</dc:subject>
   <dc:subject>Antimony selenide</dc:subject>
   <dc:subject>Surface treatment</dc:subject>
   <dc:subject>Interface engineering</dc:subject>
   <dc:subject>Thin film</dc:subject>
   <dc:subject>High-Pressure processing</dc:subject>
   <dc:description>We report an innovative high-pressure post-deposition annealing for co-evaporated Sb2Se3 absorber layers, demonstrating for its effectiveness for enhancing the crystallographic texture along the [00 l] direction. This process promotes growth parallel to the c-axis, favoring carrier transport and yielding highly crystalline films with crystallite sizes exceeding 100 nm. Nonetheless, despite improved structural properties, photovoltaic performance remained limited by interface quality. To address this, we implemented UV-O3 and KCN etching treatments, which significantly enhanced the Sb2Se3/CdS interface, leading to conversion efficiencies up to 5.8 %. XPS, UPS, and contact angle measurements confirmed that these treatments selectively modify the interface without altering bulk properties. Thus, this work highlights high-pressure treatments combined with targetes interface engineering as a promising strategy for optimizing Sb2Se3-based thin-film solar cells.</dc:description>
   <dc:description>Peer Reviewed</dc:description>
   <dc:description>Postprint (published version)</dc:description>
   <dc:date>2025-09</dc:date>
   <dc:type>Article</dc:type>
   <dc:identifier>Jimenez, M. [et al.]. Synergistic effects of high-pressure processing and interface engineering in Sb2Se3/CdS photovoltaic devices. «Solar energy», Setembre 2025, vol. 298, núm. article 113670.</dc:identifier>
   <dc:identifier>0038-092X</dc:identifier>
   <dc:identifier>https://hdl.handle.net/2117/442402</dc:identifier>
   <dc:identifier>10.1016/j.solener.2025.113670</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>https://www.sciencedirect.com/science/article/pii/S0038092X25004335</dc:relation>
   <dc:rights>http://creativecommons.org/licenses/by/4.0/</dc:rights>
   <dc:rights>Open Access</dc:rights>
   <dc:rights>Attribution 4.0 International</dc:rights>
   <dc:format>application/pdf</dc:format>
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