2026-04-17T02:50:51Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/3983442026-01-16T04:10:24Zcom_2072_1033col_2072_452950

00925njm 22002777a 4500 dc Gordillo Bargueño, Maria Carmen author Boronat Medico, Jordi author 2023-10-01 The influence of attractive boron impurities, embedded on a graphene sheet, on the phase diagrams of 4He and H2 adsorbed on top was studied using the diffusion Monte Carlo method. The doping of graphene was made by distributing the boron atoms following the same pattern found in an experimentally synthesized substrate. Our results show that while the different incommensurate solid phases of both adsorbates remain largely unchanged after doping, the liquid/gas equations of state are significantly different from the ones on pristine graphene. Doping graphene produces new translationally invariant stable phases for 4He, depending on the concentration of boron impurities, but makes the H2 ground state to remain solid. In addition, several new registered phases appear for both adsorbates. Postprint (published version) Àrees temàtiques de la UPC::Física Graphene Monte Carlo method Graphene Diffusion Monte Carlo method Quantum fluids & solids Grafè Montecarlo, Mètode de Phases of He 4 and H2 adsorbed on doped graphene